Next year's flagships may use Samsung's new 512GB internal flash storage

Dec 06, 2017, 00:49
Next year's flagships may use Samsung's new 512GB internal flash storage

Some tablets, including the iPad Pro and Microsoft's Surface tablets, already offer 512GB of space for media content. Samsung says its new solution slims down the chips so that the increased storage capacity takes up the same amount of space as a 256GB chip would. Now, Samsung Electronics has announced that it has begun mass production of the industry's first 512GB embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. "By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world".

Reading into this statement, one might possibly construe that the eUFS solution might appear inside a variant of Samsung's next top-tier handset, the yet to be announced Galaxy S9. Nothing is impossible these days.

The technology behind this new flash storage solution is based on Samsung's current 48-layer 256 gigabit (Gb) V-NAND chips.

However, if Samsung opted to introduce 512GB of internal (eUFS) storage, it would likely mean the end for the Galaxy's much-loved SD card slot.

The 64-layer 512Gb V-NAND's advanced circuit design and new power management technology will potentially help the Galaxy S9 to exhibit better battery life.

As for random read speeds, Samsung says that the 512GB eUFS has a read speed of 42,000 input/output operations per second (IOPS) and write speed of 40,000 IOPS.

The Samsung 512GB eUFS also features strong read and write performance. That's eight times faster than a microSD card and equivalent to transferring 5GB of HD video to an SSD in six seconds. According to Samsung, the random writes of the UFS package are approximately 400 times faster than the 100 IOPS speed of a conventional microSD card.

For ultra-premium flagship devices, Samsung is expected to rapidly increase production for its 64-layer 512Gb V-NAND chips, and expand its 256Gb V-NAND production. Still, we do know Samsung has a habit of using a bunch of similar specs on these two classes and we don't expect anything different come 2018.

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